7.5A 600V N

Basic Info.

Model NO.	F8n60
Batch Number	2021
Brand	Wxdh
Transport Package	Tube
Trademark	WXDH
Origin	Wuxi, China
HS Code	8541290000

Product Description

Description

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.

PARAMETER		SYMBOL	VALUE		UNIT
			8N60/I8N60/E8N60/B8N60/D8N60	F8N60
Maximum Drian-Source DC Voltage		VDS	600		V
Maximum Gate-Drain Voltage		VGS	±30		V
Drain Current(continuous)		ID(T=25ºC)	7.5		A
		(T=100ºC)	4.8		A
Drain Current(Pulsed)		IDM	30		A
Single Pulse Avalanche Energy		EAS	400		mJ
Peak Diode Recovery dv/dt		dv/dt	5		V/ns
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	100	35	W
Junction Temperature		Tj	150		ºC
storage Temperature		Tstg	-55~150		ºC

Features

Fast Switching

ESD Improved Capability

Low ON Resistance(Rdson≤1.3Ω)

Low Gate Charge(Typ: 24nC)

Low Reverse Transfer Capacitances(Typ: 5.5pF)

100% Single Pulse Avalanche Energy Test

100% ΔVDS Test

Applications

used in various power switching circuit for system miniaturization and higher efficiency.

Power switch circuit of electron ballast and adaptor.

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
8N60	TO-220C	8N60	Pb-free	Tube	1000/box
F8N60	TO-220F	F8N60	Pb-free	Tube	1000/box
B8N60	TO-251	B8N60	Pb-free	Tube	3000/box
D8N60	TO-252	D8N60	Pb-free	Tape & Reel	2500/box
I8N60	TO-262	I8N60	Pb-free	Tube	1000/box
E8N60	TO-263	E8N60	Pb-free	Tape & Reel	800/box