7A 800V N

7A 800V N;

7A 800V N-Channel Enhancement Mode Power Mosfet F7n80 to-220f **%off

PARAMETER		SYMBOL	VALUE		UNIT
			7N80/I7N80/E7N80	F7N80
Maximum Drian-Source DC Voltage		V_DS	800		V
Maximum Gate-Drain Voltage		V_GS	±30		V
Drain Current(continuous)		I_D(T=25ºC)	7		A
		(T=100ºC)	4		A
Drain Current(Pulsed)		I_DM	28		A
Single Pulse Avalanche Energy		E_AS	150		mJ
Peak Diode Recovery dv/dt		dv/dt	5		V/ns
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	120	48	W
Junction Temperature		T_j	-55~150		ºC
storage Temperature		T_stg	-55~150		ºC

Features

Fast Switching

Low ON Resistance

Low Gate Charge

Low Reverse Transfer Capacitances

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

LED power switch circuit

Electronic ballast

ATX power

High voltage H bridge PWM motor drive

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
7N80	TO-220C	7N80	Pb-free	Tube	1000/box
F7N80	TO-220F	F7N80	Pb-free	Tube	1000/box
I7N80	TO-262	I7N80	Pb-free	Tube	1000/box
E7N80	TO-263	E7N80	Pb-free	Tape & Reel	800/box

7A 800V N-Channel Enhancement Mode Power Mosfet F7n80 to-220f **%off

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