5A 200V N

5A 200V N;

5A 200V N-Channel Enhancement Mode Power Mosfet B5n20 to-251

PARAMETER		SYMBOL	VALUE		UNIT
			5N20/I5N20/E5N20/B5N20/D5N20	F5N20
Drian-Source Voltage		V_DS	200		V
Gate-Drain Voltage		V_GS	±30		V
Drain Current(continuous)		I_D(T=25ºC)	5		A
		(T=100ºC)	3.4		A
Drain Current(Pulsed)		I_DM	20		A
Single Pulse Avalanche Energy		E_AS	125		mJ
Peak Diode Recovery dv/dt		dv/dt	5		V/ns
Total Dissipation	Ta=25ºC	Ptot	2	2	W
	TC=25ºC	Ptot	40	20	W
Junction Temperature		T_j	-55~150		ºC
storage Temperature		T_stg	-55~150		ºC

Features

Fast Switching

Low ON Resistance(Rdson≤0.65Ω)

Low Gate Charge(Typ: 7nC)

Low Reverse Transfer Capacitances(Typ: 8pF)

100% Single Pulse Avalanche Energy Test

100% ΔV_DS Test

Applications

Used in various power switching circuit for system miniaturization and higher efficiency.

Power switch circuit of adaptor and charger.

Product Specifications and Packaging Models
Product Model	Package Type	Mark Name	RoHS	Package	Quantity
5N20	TO-220C	5N20	Pb-free	Tube	1000/box
F5N20	TO-220F	F5N20	Pb-free	Tube	1000/box
B5N20	TO-251	B5N20	Pb-free	Tube	3000/box
D5N20	TO-252	D5N20	Pb-free	Tape & Reel	2500/box
I5N20	TO-262	I5N20	Pb-free	Tube	1000/box
E5N20	TO-263	E5N20	Pb-free	Tape & Reel	800/box

5A 200V N-Channel Enhancement Mode Power Mosfet B5n20 to-251

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